S T M7822
S amHop Microelectronics C orp.
Arp,20 2005 ver1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
25V
F E AT UR E S
( m
W
) Max
I
D
14A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
6.5 @ V
G S
= 10V
7.5 @ V
G S
= 4.5V
R ugged and reliable.
S urface Mount P ackage.
S O-8
1
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage R ating
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
c
=25C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
Vspike
d
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
30
25
16
14
56
14
2.5
-55 to 150
Unit
V
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
50
C /W
1
S T M7822
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 20V, V
GS
= 0V
V
GS
= 16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 14A
V
GS
=4.5V, I
D
= 10A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
= 14A
Min Typ
C
Max Unit
25
1
V
uA
100 nA
0.7
1.0
6.5
7.5
10
20
3725
663
494
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=16V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
2
V
DD
= 16V,
I
D
= 14A,
V
GS
= 5V,
R
GE N
= 6
ohm
V
DS
=16V, I
D
=14A,V
GS
=10V
V
DS
=16V, I
D
=14A,V
GS
=5V
V
DS
=16V, I
D
= 14A,
V
GS
=5V
18.1
6.5
26.8
17.1
87.4
45.2
10
14.3
ns
ns
ns
ns
nC
nC
nC
nC
S T M7822
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =14A
Min Typ Max Unit
0.84 1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
V
G S
=10,9,8,7,6,5,4,3V
25
16
20
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
V
G S
=2V
12
T j=125 C
15
-55 C
10
25 C
5
0
0.0
8
4
0
0
2
4
6
8
10
12
0.4
0.8
1.2
1.6
2.0
2.4
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2.2
6000
1.8
F igure 2. Trans fer C haracteris tics
V
G S
=10V
I
D
=14A
C , C apacitance (pF )
R
DS(ON)
, On-Resistance
(Normlized)
24
4800
3600
2400
1200
C rs s
0
0
4
8
12
16
20
C is s
1.4
1.0
0.6
0.2
0
C os s
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
S T M7822
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125
V
DS
=V
G S
I
D
=250uA
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
42
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
g
F S
, T rans conductance (S )
28
21
14
7
0
0
5
10
15
V
DS
=10V
20
25
Is , S ource-drain current (A)
35
1
0
0.5
0.6
0.7
0.8
T
J
=25 C
0.9
1.0
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
5
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
60
V
G S
, G ate to S ource V oltage (V )
(O
4
3
2
1
0
0
V
DS
=16V
I
D
=14A
10
N)
L im
it
R
D
S
10
10
0m
s
ms
11
DC
1s
0.1
0.03
V
G S
=10V
S ingle P ulse
T c=25 C
0.1
1
10
20
50
6
12 18
24
30
36 42 48
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe
O perating Area
4
S T M7822
V
DD
t
on
V
IN
D
V
G S
R
GE N
G
90%
t
off
t
r
90%
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective
T ransient T hermal Impedance
1
Duty C ycle=0.5
0.2
0.1
0.1
0.05
0.02
S ingle P uls e
0.01
10
-4
P
DM
t
1
1.
2.
3.
4.
10
-2
t
2
R
qJ
A
(t)=r (t) * R
qJ
A
R
qJ
A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
qJ
A
(t)
Duty C ycle, D=t
1
/t
2
10
100
10
-3
10
-1
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
嵌入式系统
